Development of 1.3 micron oxide-confined VCSELs grown by MOCVD

Chris S. Murray; Fred D. Newman; Shangzhu Sun; J. Bridget Clevenger; David J. Bossert; Charlie X. Wang; Hong Q. Hou; Richard A. Stall

doi:10.1117/12.469247

4 June 2002 Development of 1.3 μm oxide-confined VCSELs grown by MOCVD

Chris S. Murray, Fred D. Newman, Shangzhu Sun, J. Bridget Clevenger, David J. Bossert, Charlie X. Wang, Hong Q. Hou, Richard A. Stall

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Proceedings Volume 4649, Vertical-Cavity Surface-Emitting Lasers VI; (2002) https://doi.org/10.1117/12.469247
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

An Emcore D180 metalorganic chemical vapor deposition (MOCVD) system was used to develop 1.3 micrometers InGaAsN/GaAs vertical cavity surface emitting lasers (VCSELs). The 1.3 micrometers VCSEL consists of double GaInNAs/GaAs quantum well active region and 1(lambda) cavity with DBRs consisting of alternating layers of GaAs/AlGaAs to obtain a large difference in index of refraction. Wavelengths ranging from 1.275 to 1.31 micrometers have been investigated. The room temperature peak power measured to date is approximately 1 mW, with a slope efficiency of 0.13 mW/mA and a threshold current of 1.5 mA.

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Chris S. Murray, Fred D. Newman, Shangzhu Sun, J. Bridget Clevenger, David J. Bossert, Charlie X. Wang, Hong Q. Hou, and Richard A. Stall "Development of 1.3 μm oxide-confined VCSELs grown by MOCVD", Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); https://doi.org/10.1117/12.469247

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