4 June 2002 Fabrication and applications of lift-off vertical-cavity surface-emitting laser (VCSEL) disks
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Proceedings Volume 4649, Vertical-Cavity Surface-Emitting Lasers VI; (2002) https://doi.org/10.1117/12.469235
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Vertical cavity surface emitting lasers (VCSELs) are prepared by standard epitaxial crystal growth techniques on GaAs substrates. The VCSELs include AlGaAs distributed Bragg reflectors (DBRs) and selectively oxidized AlAs or AlGaAs current confinement/optical wave-guiding layers. An additional one-lambda-thick selectively oxidized AlAs layer is placed beneath the VCSEL and used as a sacrificial layer. The entire VCSEL disk, geometrically defined by first etching a mesa down into the GaAs substrate, is separated from the substrate by selectively removing the sacrificial Al-oxide layer by wet chemical etching. The lift-off VCSEL disks designed for emission at 980 nanometers have a typical diameter of 10 to 50 micrometers and a typical thickness of 7 to 8 micrometers. In this paper I present the design, fabrication, and potential applications of lift-off VCSEL disks.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James A. Lott, "Fabrication and applications of lift-off vertical-cavity surface-emitting laser (VCSEL) disks", Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); doi: 10.1117/12.469235; https://doi.org/10.1117/12.469235

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