4 June 2002 Grating-outcoupled surface-emitting semiconductor lasers at 1310 and 1550 nm
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Proceedings Volume 4649, Vertical-Cavity Surface-Emitting Lasers VI; (2002) https://doi.org/10.1117/12.469223
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
Demonstration of a concept for a single-frequency, grating-outcoupled surface-emitting (GSE) semiconductor laser is reported at wavelengths of 1310 and 1550 nm with output powers exceeding 2 mW. First-order distributed Bragg reflector (DBR) gratings are used for feedback and a second-order grating provides surface emission. The device has a 6 x 10 micrometers outcoupling aperture that approximately matches the spot size of a single mode fiber. This architecture allows probe-testing at the wafer level similar to vertical cavity surface emitting lasers (VCSELs). These initial GSE lasers have demonstrated pulsed threshold currents of 42 mA at 1288 nm and 49 mA at 1552 nm with ~ 40 dB side-mode suppression ratios (SMSR).
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Gary A. Evans, Jay B. Kirk, Zuhair Hilali, N. V. Amarasinghe, Duy Phan, Gemunu Happawan, Bernard Dinkespiler, Taha Masood, Charles Davis, "Grating-outcoupled surface-emitting semiconductor lasers at 1310 and 1550 nm", Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); doi: 10.1117/12.469223; https://doi.org/10.1117/12.469223
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