4 June 2002 Performance of monolithic 1.3 μm VCSELs in telecom applications
Author Affiliations +
Proceedings Volume 4649, Vertical-Cavity Surface-Emitting Lasers VI; (2002) https://doi.org/10.1117/12.469246
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
This paper reviews the recent advances made in monolithic GaAs based, directly modulated, 1.3micrometers VCSEL array technology. Such VCSEL arrays are poised to begin occupying a large telecommunications application space. We present data demonstrating 1.3 micrometers VCSELs having ~ 1mW optical power across a wide temperature range of 10 to 90 degree(s)C while operating with low voltages of less than 2.5V. The data includes performance on typical 8 and 12 element arrays at the die level as well in the module. We also present very encouraging preliminary reliability results.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Larry R. Thompson, Larry R. Thompson, Leo M. F. Chirovsky, Leo M. F. Chirovsky, Andrew W. Jackson, Andrew W. Jackson, Ryan L. Naone, Ryan L. Naone, David Galt, David Galt, Simon R. Prakash, Simon R. Prakash, Stewart A. Feld, Stewart A. Feld, Max V. Crom, Max V. Crom, John G. Wasserbauer, John G. Wasserbauer, Michael D. Lange, Michael D. Lange, B. Mayer, B. Mayer, David W. Kisker, David W. Kisker, } "Performance of monolithic 1.3 μm VCSELs in telecom applications", Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); doi: 10.1117/12.469246; https://doi.org/10.1117/12.469246


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