4 June 2002 Production of high-speed oxide-confined VCSEL arrays for datacom applications
Author Affiliations +
Proceedings Volume 4649, Vertical-Cavity Surface-Emitting Lasers VI; (2002) https://doi.org/10.1117/12.469228
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
In this paper, we describe 850 nm oxide VCSEL array technologies being developed at Emcore Optical Devices. We demonstrate the excellent performance, uniformity and reliability of oxide VCSEL arrays operating at 2.5Gb/s per channel which are entering into high volume production. Due to the ever-increasing demand for bandwidth by high-bit-rate data communications links, VCSELs operating at even higher bandwidths are needed. We discuss the development of oxide VCSELs capable of transmitting 10 Gb/s for application in the 10 gigabit Ethernet and other emerging high-aggregate bandwidth standards.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David J. Bossert, David J. Bossert, Doug Collins, Doug Collins, Ian Aeby, Ian Aeby, J. Bridget Clevenger, J. Bridget Clevenger, Christopher J. Helms, Christopher J. Helms, Wenlin Luo, Wenlin Luo, Charlie X. Wang, Charlie X. Wang, Hong Q. Hou, Hong Q. Hou, } "Production of high-speed oxide-confined VCSEL arrays for datacom applications", Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); doi: 10.1117/12.469228; https://doi.org/10.1117/12.469228


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