4 June 2002 Temperature characteristics of 1.16 μm highly strained GaInAs/GaAs VCSELs
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Proceedings Volume 4649, Vertical-Cavity Surface-Emitting Lasers VI; (2002) https://doi.org/10.1117/12.469248
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
We demonstrated highly strained GaInAs/GaAs QW VCSELs emitting at 1.16 micrometers . The fabricated device shows the record low threshold current density and high efficiency in 1.1-1.2 micrometers wavelength range. The VCSEL structure was monolithically grown on a (100) n-type GaAs substrate by a low-pressure metalorganic vapor phase epitaxy (MOVPE). The active region consists of triple 8 nm thick Ga0.64In0.36As TQWs separated by 25 nm GaAs barrier layers. The compressive strain of QWs is 2.3%. The threshold current is 3 mA for a 10micrometers ~10micrometers oxide device, corresponding to a threshold current density of 3 kA/cm2. We achieved the maximum output power of over 2 mW and a slope efficiency of 0.3 W/A at 25 degree(s)C, which are the record data for 1.2 micrometers band GaInAs VCSELs. The maximum CW operating temperature is 85 degree(s)C. The threshold current is almost constant in the temperature range of 20-70 degree(s)C which results from appropriate wavelength matching between gain peak and lasing mode. The temperature dependence of the lasing wavelength is 0.07 nm/K. We present the details of temperature characteristics of the fabricated VCSEL and discuss a possibility of uncooled GaInAs/GaAs VCSELs for high speed LANs.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Kondo, Takashi Kondo, Masakazu Arai, Masakazu Arai, Nobuhiko Nishiyama, Nobuhiko Nishiyama, Munechika Azuchi, Munechika Azuchi, Akihiro Matsutani, Akihiro Matsutani, Tomoyuki Miyamoto, Tomoyuki Miyamoto, Fumio Koyama, Fumio Koyama, Kenichi Iga, Kenichi Iga, } "Temperature characteristics of 1.16 μm highly strained GaInAs/GaAs VCSELs", Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); doi: 10.1117/12.469248; https://doi.org/10.1117/12.469248
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