Paper
4 June 2002 Ultrafast narrow bandwidth modulation of VCSELs
Cun-Zheng Ning
Author Affiliations +
Abstract
Ultrafast modulation of semiconductor lasers at a rate higher than the relaxation-oscillation limited frequency is important for millimeter wave photonics and many other applications. Edge-emitters of compound cavities and other multi-section devices have been employed for such generation in the past. We demonstrate in this paper two methods of modulating VCSELs in the frequency range between 20GHz and 130GHz through a detailed numerical simulation. The first method employs two coupled VCSELs and high frequency oscillation is provided by inter-VCSEL coupling, while the second method utilizes multi-transverse mode beating in a large VCSEL. We show that the mode beating is greatly enhanced by collecting laser output from part of the output facet, providing a relatively easy laser modulation at a frequency larger than 100GHz.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cun-Zheng Ning "Ultrafast narrow bandwidth modulation of VCSELs", Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); https://doi.org/10.1117/12.469239
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KEYWORDS
Modulation

Vertical cavity surface emitting lasers

Ultrafast phenomena

Solids

Semiconductor lasers

Frequency modulation

Data communications

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