4 June 2002 Ultrafast narrow bandwidth modulation of VCSELs
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Proceedings Volume 4649, Vertical-Cavity Surface-Emitting Lasers VI; (2002) https://doi.org/10.1117/12.469239
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Ultrafast modulation of semiconductor lasers at a rate higher than the relaxation-oscillation limited frequency is important for millimeter wave photonics and many other applications. Edge-emitters of compound cavities and other multi-section devices have been employed for such generation in the past. We demonstrate in this paper two methods of modulating VCSELs in the frequency range between 20GHz and 130GHz through a detailed numerical simulation. The first method employs two coupled VCSELs and high frequency oscillation is provided by inter-VCSEL coupling, while the second method utilizes multi-transverse mode beating in a large VCSEL. We show that the mode beating is greatly enhanced by collecting laser output from part of the output facet, providing a relatively easy laser modulation at a frequency larger than 100GHz.
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Cun-Zheng Ning, Cun-Zheng Ning, } "Ultrafast narrow bandwidth modulation of VCSELs", Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); doi: 10.1117/12.469239; https://doi.org/10.1117/12.469239

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