PROCEEDINGS VOLUME 4650
SYMPOSIUM ON INTEGRATED OPTOELECTRONIC DEVICES | 19-25 JANUARY 2002
Photodetector Materials and Devices VII
SYMPOSIUM ON INTEGRATED OPTOELECTRONIC DEVICES
19-25 January 2002
San Jose, California, United States
Photodetectors for High-Speed Applications
Proc. SPIE 4650, Optoelectronic components for optical information processing applications, 0000 (21 May 2002); doi: 10.1117/12.467649
Proc. SPIE 4650, Optic fiber clock distribution in high-speed video memory, 0000 (21 May 2002); doi: 10.1117/12.467657
Proc. SPIE 4650, GaAs PIN photodetectors for 10 Gbit/s data communication, 0000 (21 May 2002); doi: 10.1117/12.467664
Proc. SPIE 4650, Novel germanium photodetectors fabricated with a diffused junction, 0000 (21 May 2002); doi: 10.1117/12.467672
Avalanche Photodiodes
Proc. SPIE 4650, Wafer-bonded InGaAs/silicon avalanche photodiodes, 0000 (21 May 2002); doi: 10.1117/12.467674
Proc. SPIE 4650, Frequency response of multilayer avalanche photodiodes: structural effects, 0000 (21 May 2002); doi: 10.1117/12.467675
Proc. SPIE 4650, Characterization of Geiger mode avalanche photodiodes for fluorescence decay measurements, 0000 (21 May 2002); doi: 10.1117/12.467676
UV Photodetectors
Proc. SPIE 4650, Structural, optical, and electrical characterization of ZnO/Zn0.8Mg0.2O quantum wells for UV applications, 0000 (21 May 2002); doi: 10.1117/12.467677
Proc. SPIE 4650, High-speed visible-blind GaN-based ITO-Schottky photodiodes, 0000 (21 May 2002); doi: 10.1117/12.467678
Section
Proc. SPIE 4650, Future of AlxGa1-xN materials and device technology for ultraviolet photodetectors, 0000 (21 May 2002); doi: 10.1117/12.467650
UV Photodetectors
Proc. SPIE 4650, Advances in wide-bandgap semiconductor-based photocathode devices for low-light-level applications, 0000 (21 May 2002); doi: 10.1117/12.467651
Proc. SPIE 4650, Femtosecond studies of fundamental materials issues in III-nitride ultraviolet photodetectors, 0000 (21 May 2002); doi: 10.1117/12.467652
Proc. SPIE 4650, Solar-blind AlGaN-based UV photodetectors grown on Si (111) substrates, 0000 (21 May 2002); doi: 10.1117/12.467653
Infrared Photodetectors and Focal Plane Arrays
Proc. SPIE 4650, Comparison of performance limits of infrared detector materials, 0000 (21 May 2002); doi: 10.1117/12.467654
Proc. SPIE 4650, Recent development in infrared FPAs with multispectral 128exp2 IRCMOS, 0000 (21 May 2002); doi: 10.1117/12.467655
Proc. SPIE 4650, Amorphous silicon technology improvement at CEA-LETI, 0000 (21 May 2002); doi: 10.1117/12.467656
Proc. SPIE 4650, QWIP-LED pixelless imaging, 0000 (21 May 2002); doi: 10.1117/12.467658
Quantum Well and Superlattice Detectors
Proc. SPIE 4650, Whither P-type GaAs/AlGaAs QWIP?, 0000 (21 May 2002); doi: 10.1117/12.467659
Proc. SPIE 4650, Pulsed-laser-induced quantum well intermixing on the InGaAs/InGaAsP MQW waveguide photodetector, 0000 (21 May 2002); doi: 10.1117/12.467660
Proc. SPIE 4650, Backside illuminated In(Ga)As/InAsSbP DH photodiodes for methane sensing at 3.3 um, 0000 (21 May 2002); doi: 10.1117/12.467661
Proc. SPIE 4650, Type-II InGaAs/GaAsSb superlattice for photodetection in the near infrared, 0000 (21 May 2002); doi: 10.1117/12.467662
Proc. SPIE 4650, InAs/InGaSb Type-II strained layer superlattice IR detectors, 0000 (21 May 2002); doi: 10.1117/12.467663
Section
Proc. SPIE 4650, Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy, 0000 (21 May 2002); doi: 10.1117/12.467665
Proc. SPIE 4650, Noninvasive electrical characterization of semiconductor and interface, 0000 (21 May 2002); doi: 10.1117/12.467666
Proc. SPIE 4650, Two-photon excited emission probing of thin film CdS formed by various techniques, 0000 (21 May 2002); doi: 10.1117/12.467667
Proc. SPIE 4650, Quantitative secondary ion mass spectrometry (SIMS) of III-V materials, 0000 (21 May 2002); doi: 10.1117/12.467668
Poster Session
Proc. SPIE 4650, Assessment of colossal magnetoresistive manganite thin films for infrared detector applications, 0000 (21 May 2002); doi: 10.1117/12.467669
Proc. SPIE 4650, Improved velocity mismatch in traveling-wave coplanar waveguide photodetector with thick ground-metal-line, 0000 (21 May 2002); doi: 10.1117/12.467670
Proc. SPIE 4650, Surface leakage current in HgCdTe photodiodes, 0000 (21 May 2002); doi: 10.1117/12.467671
Infrared Photodetectors and Focal Plane Arrays
Proc. SPIE 4650, Type-II InAs/GaSb superlattices and detectors with lambda c >18m, 0000 (21 May 2002); doi: 10.1117/12.467673
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