21 May 2002 Backside illuminated In(Ga)As/InAsSbP DH photodiodes for methane sensing at 3.3 μm
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Proceedings Volume 4650, Photodetector Materials and Devices VII; (2002) https://doi.org/10.1117/12.467661
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
We describe Gd doped backside illuminated In(Ga)As double and single heterostructure photodiodes with InAsSbP cladding layers grown onto heavily doped n+-InAs transparent substrate of the episide-down bonding design. The advantages of the construction include improvement of material quality due to rare earth gettering effect and the possibility of coupling with fibers or immersion lenses through the contact free surface. The report presents U-I, spectral response and sensitivity of narrow band (3.1-3.4 micrometers ) photodiodes at 20divided by180 degree(s)C with RoA product as high as 2 (Omega) cm2 at room temperature and serial resistance as low as 0.1 (Omega) .
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris A. Matveev, Boris A. Matveev, Nonna V. Zotova, Nonna V. Zotova, Sergey A. Karandashev, Sergey A. Karandashev, Maxim A. Remennyi, Maxim A. Remennyi, Nikolai M. Stus', Nikolai M. Stus', Georgii N. Talalakin, Georgii N. Talalakin, } "Backside illuminated In(Ga)As/InAsSbP DH photodiodes for methane sensing at 3.3 μm", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467661; https://doi.org/10.1117/12.467661


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