Novel germanium photodetectors fabricated with a diffused junction

Charles B. Morrison; Rengarajan Sudharsanan; Moran Haddad; Joseph C. Boisvert; Dmitri D. Krut; Richard R. King; Nasser H. Karam

doi:10.1117/12.467672

21 May 2002 Novel germanium photodetectors fabricated with a diffused junction

Charles B. Morrison, Rengarajan Sudharsanan, Moran Haddad, Joseph C. Boisvert, Dmitri D. Krut, Richard R. King, Nasser H. Karam

Author Affiliations +

Proceedings Volume 4650, Photodetector Materials and Devices VII; (2002) https://doi.org/10.1117/12.467672
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Germanium (Ge) photodetectors are fabricated by growing epitaxial III-V compounds on Ge substrates and by in-situ formation of the PN junction by MOVPE. After material growth, Ge photodetectors are mesa-etched using conventional optoelectronic device processing techniques. By varying the Ge substrate resistivity and the device area, Ge photodetector properties such as reverse leakage current, capacitance, and shunt resistance have been engineered. Such devices have demonstrated leakage currents below 50(mu) A/cm² at -0.1 V bias. For optoelectronic applications that require high temperature operation, high shunt resistance detectors exhibit leakage currents below (mu) A/cm² at 80 degree(s)C. Low capacitance devices have measured as little as 275 pF at 0V bias for a 1 mm diameter detector. High shunt resistance devices are a low cost alternative to conventional InGaAs photodiodes in applications such as laser monitor diodes.

Citation Download Citation

Charles B. Morrison, Rengarajan Sudharsanan, Moran Haddad, Joseph C. Boisvert, Dmitri D. Krut, Richard R. King, and Nasser H. Karam "Novel germanium photodetectors fabricated with a diffused junction", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); https://doi.org/10.1117/12.467672

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