21 May 2002 Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy
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Proceedings Volume 4650, Photodetector Materials and Devices VII; (2002) https://doi.org/10.1117/12.467665
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
Positron-annihilation measurements and nuclear reaction analysis (utilizing the 14N(d, p)15N and 14N(d, a)12C reactions) in conjunction with Rutherford backscattering spectrometry in the channeling geometry were used to study the defects in as-grown Ga(In)NAs materials grown by molecular beam epitaxy (MBE) using a radio-frequency (rf) plasma nitrogen source. Our data unambiguously show the existence of vacancy-type defects, which we attribute to Ga vacancies, and nitrogen interstitials in the as-grown Nitride-Arsenide epilayers. These point defects, we believe, are responsible for the low luminescence efficiency of as-grown Ga(In)NAs materials and the enhanced diffusion process during annealing.
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Wei Li, Wei Li, Markus Pessa, Markus Pessa, Tommy Ahlgren, Tommy Ahlgren, James Dekker, James Dekker, } "Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467665; https://doi.org/10.1117/12.467665
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