21 May 2002 Pulsed-laser-induced quantum well intermixing on the InGaAs/InGaAsP MQW waveguide photodetector
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Proceedings Volume 4650, Photodetector Materials and Devices VII; (2002) https://doi.org/10.1117/12.467660
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
In this paper, we report our research work on the application of the pulsed-laser-induced disordering (P-LID) technique in InGaAs/InGaAsP MQW waveguide photodetector. A Q-switched Nd-YAG laser with wavelength of 1.064 micrometers was used to irradiate on the InGaAs/InGaAsP quantum well materials, annealing process at 625 degree(s)C for 120s was followed. A maximum bandgap shift of up to 112meV has been observed. The variety of photocurrent curves indicated that the cut-off wavelength of the photodetector becomes shorter with increasing of intermixing strength.
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Na Li, Na Li, Teik Kooi Ong, Teik Kooi Ong, Yuen Chuen Chan, Yuen Chuen Chan, Chang-Qing Xu, Chang-Qing Xu, X. H. Tang, X. H. Tang, "Pulsed-laser-induced quantum well intermixing on the InGaAs/InGaAsP MQW waveguide photodetector", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467660; https://doi.org/10.1117/12.467660

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