Structural, optical, and electrical characterization of ZnO/Zn0.8Mg0.2O quantum wells for UV applications

Agisilaos A. Iliadis; Soumya Krishnamoorthy; Wei Yang; Supab Choopun; R. D. Vispute; T. Venkatesan

doi:10.1117/12.467677

21 May 2002 Structural, optical, and electrical characterization of ZnO/Zn_0.8Mg_0.2O quantum wells for UV applications

Agisilaos A. Iliadis, Soumya Krishnamoorthy, Wei Yang, Supab Choopun, R. D. Vispute, T. Venkatesan

Proceedings Volume 4650, Photodetector Materials and Devices VII; (2002) https://doi.org/10.1117/12.467677
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

The structural, optical, and electrical characteristics of An_0.8Mg_0.2O/ZnO/Zn_0.8Mg_0.2O quantum well heterostructures, are reported. The structures consist of a ZnO quantum well, with thickness of 6 nm, 8 nm, or 50 nm, placed between two Zn_0.8Mg_0.2O barriers, with a thickness of 7nm. The epitaxial layers are grown by pulsed laser deposition (PLD) on c-cut sapphire substrates. Resonant tunneling action in the 6 nm and 8 nm width single quantum well has been observed. Negative differential resistance (NDR) peaks were evident at room temperature and at 200 K in this system for the first time. X-ray diffraction spectra showed high crystal quality, and pulsed photoluminescence measurements showed high quality hetero- interfaces with a FWHM of 5.6 meV at 77K. The photoluminescence (PL) transitions in the quantum wells occurred at wavelengths of 345.55 nm and 348.22nm for the 6 nm and 8 nm well width respectively. The current-voltage characteristics of the structures showed the negative differential resistance peaks at RT and 200 K, making this type of wide band-gap semiconductor material system a very promising system for applications both in electron transport and in UV detector devices.

Citation Download Citation

Agisilaos A. Iliadis, Soumya Krishnamoorthy, Wei Yang, Supab Choopun, R. D. Vispute, and T. Venkatesan "Structural, optical, and electrical characterization of ZnO/Zn_0.8Mg_0.2O quantum wells for UV applications", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); https://doi.org/10.1117/12.467677

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available