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21 May 2002 Type-II InAs/GaSb superlattices and detectors with λc >18μm
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Proceedings Volume 4650, Photodetector Materials and Devices VII; (2002)
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
The authors report the most recent advances in type II InAs/GaSb superlattice materials and photovoltaic detectors. Lattice mismatch between the substrate and the superlattice has been routinely achieved below 0.1%, and less than 0.0043% as the record. The FWHM of the zeroth order peak from x-ray diffraction has been decreased below 50 arcsec and a record of less than 44arcsec has been achieved. High performance detectors with 50% cutoff beyond 18 micrometers up to 26 micrometers have been successfully demonstrated. The detectors with a 50% cut-off wavelength of 18.8 micrometers showed a peak current responsivity of 4 A/W at 80K, and a peak detectivity of 4.510 cm x Hz1/2/W was achieved at 80K at a reverse bias of 110mV under 300K 2(pi) FOV background. Some detectors showed a projected 0% cutoff wavelength up to 28~30 micrometers . The peak responsivity of 3Amp/Watt and detectivity of 4.2510 cm x Hz1/2/W was achieved under -40mV reverse bias at 34K for these detectors.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manijeh Razeghi, Yajun Wei, Aaron Gin, Gail J. Brown, and Daniel K. Johnstone "Type-II InAs/GaSb superlattices and detectors with λc >18μm", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002);

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