21 May 2002 Type-II InGaAs/GaAsSb superlattice for photodetection in the near infrared
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Proceedings Volume 4650, Photodetector Materials and Devices VII; (2002) https://doi.org/10.1117/12.467662
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
The optical properties of an (formula available in paper) type-II superlattice lattice matched to InP(001) was characterized by photo luminescence and near infrared photoresponse. The samples were designed for optical emission near 1.8micrometers and were grown by molecular beam epitaxy. At 4K, a strong type-II luminescence at 1.8micrometers (689meV0 with a full width at half maximum (FWHM) of 18 meV was observed. Similarly, the onset of the band edge photoresponse occurred at 1.8micrometers (693 meV) at 10K. We believe this to be the first observation of both luminescence and photoresponse from the InGaAs/GaAsSb/InP materials system grown by any technique.
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Gail J. Brown, Gail J. Brown, Joseph E. Van Nostrand, Joseph E. Van Nostrand, S. M. Hedge, S. M. Hedge, W. J. Siskaninetz, W. J. Siskaninetz, Qianghua Xie, Qianghua Xie, } "Type-II InGaAs/GaAsSb superlattice for photodetection in the near infrared", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467662; https://doi.org/10.1117/12.467662

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