21 May 2002 Wafer-bonded InGaAs/silicon avalanche photodiodes
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Proceedings Volume 4650, Photodetector Materials and Devices VII; (2002) https://doi.org/10.1117/12.467674
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
Wafer-bonded avalanche photodiodes (APDs) combining InGaAs for the absorption layer and silicon for the multiplication layer have been fabricated. The reported APDs have a very low room-temperature dark current density of only 0.7 mA/cm2 at a gain of 10. The dark current level is as low as that of conventional InGaAs/InP APDs. High avalanche gains in excess of 100 are presented. The photodiode responsivity at a wavelength of 1.31 micrometers is 0.64 A/W, achieved without the use of an anti-reflection coating. The RC-limited bandwidth is 1.45 GHz and the gain-bandwidth product is 290 GHz. The excess noise factor F is much lower than that of conventional InP-based APDs, with values of 2.2 at a gain of 10 and 2.3 at a gain of 20. This corresponds to an effective ionization rate ratio keff as low as 0.02. The expected receiver sensitivity for 2.5 Gb/s operation at (lambda) = 1.31 um using our InGaAs/silicon APD is -41 dBm at an optimal gain of M = 80.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandre Pauchard, Alexandre Pauchard, Phil Mages, Phil Mages, Yimin Kang, Yimin Kang, Martin Bitter, Martin Bitter, Z. Pan, Z. Pan, D. Sengupta, D. Sengupta, Steve Hummel, Steve Hummel, Yu-Hwa Lo, Yu-Hwa Lo, Paul K. L. Yu, Paul K. L. Yu, } "Wafer-bonded InGaAs/silicon avalanche photodiodes", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467674; https://doi.org/10.1117/12.467674
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