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21 May 2002 Wafer-bonded InGaAs/silicon avalanche photodiodes
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Proceedings Volume 4650, Photodetector Materials and Devices VII; (2002)
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Wafer-bonded avalanche photodiodes (APDs) combining InGaAs for the absorption layer and silicon for the multiplication layer have been fabricated. The reported APDs have a very low room-temperature dark current density of only 0.7 mA/cm2 at a gain of 10. The dark current level is as low as that of conventional InGaAs/InP APDs. High avalanche gains in excess of 100 are presented. The photodiode responsivity at a wavelength of 1.31 micrometers is 0.64 A/W, achieved without the use of an anti-reflection coating. The RC-limited bandwidth is 1.45 GHz and the gain-bandwidth product is 290 GHz. The excess noise factor F is much lower than that of conventional InP-based APDs, with values of 2.2 at a gain of 10 and 2.3 at a gain of 20. This corresponds to an effective ionization rate ratio keff as low as 0.02. The expected receiver sensitivity for 2.5 Gb/s operation at (lambda) = 1.31 um using our InGaAs/silicon APD is -41 dBm at an optimal gain of M = 80.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandre Pauchard, Phil Mages, Yimin Kang, Martin Bitter, Z. Pan, D. Sengupta, Steve Hummel, Yu-Hwa Lo, and Paul K. L. Yu "Wafer-bonded InGaAs/silicon avalanche photodiodes", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002);

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