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22 May 2002 Achieving spatial coherence in broad-area lasers using transverse-gain tailoring techniques
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Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002)
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
We present a simple broad area semiconductor laser which uses a current spreading layer to modify the transverse gain profile. The device exhibits excellent spatial coherence to total output powers of 2.5 W under pulsed operation. Devices have been focused down to a spot size of approximately 5 micrometers FWHM at 2.5 W with the beam profile and position remaining stable over the entire range of operation. Under CW operation, thermal effects reduce spatial coherence leading to a significantly increased spot size and loss of beam stability. This work demonstrates the advantages of modifying the transverse gain profile and how it can be used to produce high brightness devices required for single mode fiber coupling.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John A. Houlihan, James R. O'Callaghan, Vincent Voignier, Guillaume Huyet, John Gerard McInerney, and Brian Corbett "Achieving spatial coherence in broad-area lasers using transverse-gain tailoring techniques", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002);


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