22 May 2002 Group III-arsenide-nitride quantum well structures on GaAs for laser diodes emitting at 1.3 μm
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Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467963
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
We report the growth of GaInAsN heterostructures on GaAs substrates by conventional molecular beam epitaxy (MBE) using a radio frequency plasma source. Lattice-matched bulk samples and several strained single quantum well (SQW) and multiple quantum well (MQW) structures were grown. The QWs were sandwiched between two GaAsN strain-compensating layers (SCL) and AlGaAs cladding layers. By the aid of SCLs the photoluminescence (PL) wavelength red-shifted as much as 88 nm with the same intensity. GaInAsN strain-mediating layers (SML), having less strain than QW, were also used to obtain red shift and improved luminescence properties. The structures were studied by room temperature (RT) PL, x-ray diffraction (XRD) measurements and atomic force microscopy (AFM). The indium and nitrogen compositions of the QWs varied from 34 to 38 % and 1.3 to 3.5 %, respectively. Most of the studied structures showed PL peak wavelength at over 1.3 mm. Depending on the structure and thermal annealing treatment conditions the wavelength blue shifted up to 55 nm and intensity increased ~45 times. Furthermore, an AFM image of a five QW sample showed very smooth surface indicating together with PL measurements that high quality MQWs can be realized. In addition, 1.32-micrometers continuous-wave GaInAsN edge-emitting lasers were demonstrated.
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Tomi Jouhti, Chang Si Peng, Emil-Mihai Pavelescu, Wei Li, Victor-Tapio Rangel-Kuoppa, Janne Konttinen, Pekka Laukkanen, Markus Pessa, "Group III-arsenide-nitride quantum well structures on GaAs for laser diodes emitting at 1.3 μm", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467963; https://doi.org/10.1117/12.467963

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