22 May 2002 High-output-power polarization-insensitive SOA
Author Affiliations +
Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467940
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
An 1550 nm semiconductor optical amplifier (SOA) with a very thin tensile-strained bulk active layer and active width-tapered spot-size converters was developed. The SOA module exhibited a record high saturation output power of +17 dBm together with a low noise figure of 7 dB, large gain of 19 dB and small polarization sensitivity of 0.2 dB. A good eye pattern without waveform distortion due to the pattern effect was obtained for amplified 10 Gb/s NRZ signals up to an average output power of +12 dBm.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ken Morito, Ken Morito, "High-output-power polarization-insensitive SOA", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467940; https://doi.org/10.1117/12.467940

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