22 May 2002 High-power 400-nm AlGaInN/650-nm AlGaInP semiconductor lasers
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Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467960
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
We have successfully developed GaInN-based 400nm lasers for DVR-blue systems and GaInP-based 650nm lasers for DVD+/- RW systems. The high-performance blue-violet laser developed here has low relative intensity noise (RIN) of -128 dB/Hz, low aspect ratio of 2.3, and a nominal lifetime of 15000 h at 60 degree(s)C and 30 mW output power. The 650nm red laser was developed for DVD+/- RW systems, which require red lasers with output power exceeding 90 mW in order to increase the data transfer speed. The high-power red lasers developed here are capable of 90 to 120 mW output power with high reliability at 60 to 70 degree(s)C and have a low aspect ratio of 2.3.
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Shiro Uchida, Satoru Kijima, Shinichi Ansai, Tsuyoshi Tojyo, Katsuyoshi Shibuya, Shinroh Ikeda, Takashi Mizuno, Motonubu Takeya, Syu Goto, Takeharu Asano, Masao Ikeda, "High-power 400-nm AlGaInN/650-nm AlGaInP semiconductor lasers", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467960; https://doi.org/10.1117/12.467960
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