22 May 2002 High-power 400-nm AlGaInN/650-nm AlGaInP semiconductor lasers
Author Affiliations +
Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467960
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
We have successfully developed GaInN-based 400nm lasers for DVR-blue systems and GaInP-based 650nm lasers for DVD+/- RW systems. The high-performance blue-violet laser developed here has low relative intensity noise (RIN) of -128 dB/Hz, low aspect ratio of 2.3, and a nominal lifetime of 15000 h at 60 degree(s)C and 30 mW output power. The 650nm red laser was developed for DVD+/- RW systems, which require red lasers with output power exceeding 90 mW in order to increase the data transfer speed. The high-power red lasers developed here are capable of 90 to 120 mW output power with high reliability at 60 to 70 degree(s)C and have a low aspect ratio of 2.3.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shiro Uchida, Satoru Kijima, Shinichi Ansai, Tsuyoshi Tojyo, Katsuyoshi Shibuya, Shinroh Ikeda, Takashi Mizuno, Motonubu Takeya, Syu Goto, Takeharu Asano, Masao Ikeda, "High-power 400-nm AlGaInN/650-nm AlGaInP semiconductor lasers", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467960; https://doi.org/10.1117/12.467960


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