22 May 2002 High-power and high-brightness laser diode structures at 980 nm using Al-free materials
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Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467936
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
High bit rate, WDM, networks use intensively Er or Er/Yb doped fibre amplifiers. Reliable, high power laser diodes at 980nm and 1480nm are key devices for pumping these amplifiers. We have developed different structures of laser diodes at 980nm, using Aluminium free materials. Our laser structure shows low optical losses together with a low threshold current density and a high external differential efficiency. We demonstrate a mini-bar of broad area laser diodes (emissive width of 2.6mm) with an optical output power of 19W at 25A under CW operation. We have also developed a mini-bar of small angle index guided tapered laser diodes (W=2.6mm). We demonstrate 17W at 27.6A under CW operation at 20 degree(s)C. Slow axis far field has a Gaussian single mode shape, with a FWHM of 3.3 degree(s) (at 15A, 11W), which is two times less than obtained on multimode broad area lasers. With such a device, we expect to couple 10W into a 100micrometers diameter fiber. We also demonstrate, on a large aperture gain-guided tapered laser, an output power of 1.3W with an M2 of 3.3
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Michel M. Krakowski, Sophie-Charlotte Auzanneau, Michel Calligaro, Olivier Parillaud, Philippe Collot, Michel Lecomte, Benoit Boulant, Thierry Fillardet, "High-power and high-brightness laser diode structures at 980 nm using Al-free materials", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467936; https://doi.org/10.1117/12.467936
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