22 May 2002 Influence of intraband relaxation processes on threshold and power-current characteristics of semiconductor lasers
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Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002); doi: 10.1117/12.467955
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
The effect of carrier-carrier relaxation and carrier - phonon relaxation on threshold characteristics of quantum well (QW) lasers is studied. Carrier relaxation time considerably depends on temperature, carrier density, and quantum well width. It is shown that in this case the gain coefficient becomes a more pronounced function of temperature and carrier density.
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Georgy G. Zegrya, Natalya A. Gunko, Eugen B. Dogonkin, "Influence of intraband relaxation processes on threshold and power-current characteristics of semiconductor lasers", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467955; https://doi.org/10.1117/12.467955
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KEYWORDS
Quantum wells

Laser damage threshold

Semiconductor lasers

Electrons

Scattering

Solids

Indium arsenide

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