22 May 2002 Optical gain and loss in 3-μm diode W lasers
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Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467946
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
Gain in broad area mid-infrared diode W lasers ((lambda) =3- 3.1micrometers ) has been measured using lateral mode spatial filtering combined with the Hakki-Paoli approach. The internal optical loss of approximately equals 19cm-1 determined from the gain spectra was the same for devices with either 10- or 5-period active regions and nearly constant in the temperature range between 80 and 160K. Analysis of the differential gain and spontaneous emission spectra shows that the main contribution to the temperature dependence of the threshold current is Auger recombination, which dominates within almost the entire temperature range studied (80-160K).
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Sergei Suchalkin, David Westerfeld, Dimitrii Donetski, Ramon U. Martinelli, Igor Vurgaftman, Jerry R. Meyer, Serge Luryi, Gregory L. Belenky, "Optical gain and loss in 3-μm diode W lasers", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467946; https://doi.org/10.1117/12.467946
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