22 May 2002 Optical gain and loss in 3-μm diode W lasers
Author Affiliations +
Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467946
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Gain in broad area mid-infrared diode W lasers ((lambda) =3- 3.1micrometers ) has been measured using lateral mode spatial filtering combined with the Hakki-Paoli approach. The internal optical loss of approximately equals 19cm-1 determined from the gain spectra was the same for devices with either 10- or 5-period active regions and nearly constant in the temperature range between 80 and 160K. Analysis of the differential gain and spontaneous emission spectra shows that the main contribution to the temperature dependence of the threshold current is Auger recombination, which dominates within almost the entire temperature range studied (80-160K).
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergei Suchalkin, Sergei Suchalkin, David Westerfeld, David Westerfeld, Dimitrii Donetski, Dimitrii Donetski, Ramon U. Martinelli, Ramon U. Martinelli, Igor Vurgaftman, Igor Vurgaftman, Jerry R. Meyer, Jerry R. Meyer, Serge Luryi, Serge Luryi, Gregory L. Belenky, Gregory L. Belenky, } "Optical gain and loss in 3-μm diode W lasers", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467946; https://doi.org/10.1117/12.467946


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