22 May 2002 Type-II diode lasers based on interface recombination at 3.3μm
Author Affiliations +
Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467947
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
There is considerable interest in the realization of room temperature mid-infrared diode lasers for a variety of applications, including remote gas sensing, infrared countermeasures and molecular spectroscopy. However the maximum temperature of operation in narrow gap III-V component alloys is limited by strong non-radiative Auger recombination and various band structure engineering techniques are being investigated to provide Auger suppression. In our work we are investigating the possibility of obtaining a practical 3.3micrometers laser by making use of radiative recombination across single type II hetero-interfaces. Because transitions occur between confined electron and hole states localized on either side of the heterojunction where the potential wells are triangular, there exists the possibility of tailoring the wave-function overlap to give good Auger suppression while still maintaining high radiative output. At the same time growth form the liquid phase offers potentially lower SRH recombination. We compared two such heterojunctions (InAs0.94Sb0.06/InAs and Ga0.96In0.04As0.11Sb0.89/ InAs) grown by rapid slider LPE and report on the photoluminescence and electroluminescence from the interfaces. The dependence of these interface transitions on temperature, excitation intensity, band offset and polarization is reported, with a view towards incorporating these in the active region of a practical laser.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anthony Krier, Anthony Krier, Derek A. Wright, Derek A. Wright, Victoria J. Ellarby, Victoria J. Ellarby, Victor V. Sherstnev, Victor V. Sherstnev, Konstantin D. Moiseev, Konstantin D. Moiseev, Yury P. Yakovlev, Yury P. Yakovlev, } "Type-II diode lasers based on interface recombination at 3.3μm", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467947; https://doi.org/10.1117/12.467947

Back to Top