Through wafer via hole by reactive ion etching of GaAs

Yuwen Chen; Chee Leong Tan; Boon Siew Ooi; Kaladhar Radhakrishnan; Geok Ing Ng

doi:10.1117/12.469559

3 June 2002 Through wafer via hole by reactive ion etching of GaAs

Yuwen Chen, Chee Leong Tan, Boon Siew Ooi, Kaladhar Radhakrishnan, Geok Ing Ng

Author Affiliations +

Proceedings Volume 4652, Optoelectronic Interconnects, Integrated Circuits, and Packaging; (2002) https://doi.org/10.1117/12.469559
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Through wafer via hole connection has found applications in photonic and microelectronic devices. Such vias provide higher packing densities, improved gain and simplified device layout. In this paper, reactive ion etching of GaAs via hold has been systematically studied using CCl₂F₂ as the reactive gas. The effects of process pressure and r.f. power on the etch rate and the resultant etch profiles have been investigated. It was found that the etch rate increased linearly with the increase of process pressure for values below 50 mTorr. The process pressure had a significant influence on the etch profiles. At low process pressure, anisotropic profiles were observed. The etch rate increased as the r.f. power was increased due to the increased excitation of reactive species as well as higher ion energies and improved sputter desorption of the etch products. Reproducible, and good etch profiles with etch rate as high as 1.55 micrometers /min. could be obtained at a process pressure and r.f. power of 50 mTorr and 150 W, respectively. Devices have been successfully fabricated which employed the via hole process developed in this study. The via hole connections for the grounding were found to be working very well as confirmed by DC measurements.

Citation Download Citation

Yuwen Chen, Yuwen Chen, Chee Leong Tan, Chee Leong Tan, Boon Siew Ooi, Boon Siew Ooi, Kaladhar Radhakrishnan, Kaladhar Radhakrishnan, Geok Ing Ng, Geok Ing Ng, "Through wafer via hole by reactive ion etching of GaAs", Proc. SPIE 4652, Optoelectronic Interconnects, Integrated Circuits, and Packaging, (3 June 2002); doi: 10.1117/12.469559; https://doi.org/10.1117/12.469559

ACCESS THE FULL ARTICLE

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $14.40

Non-members: $18.00 ADD TO CART

Show All Keywords

Keywords/Phrases

Search In:

Publication Years