27 March 2002 Active control of position, density, and size for Si quantum dots for nanophotonic applications
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Proceedings Volume 4654, Silicon-based and Hybrid Optoelectronics IV; (2002) https://doi.org/10.1117/12.463845
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Ordered Si nanocrystals showing a strong room temperature luminescence are prepared using a novel SiO/SiO2 superlattice approach fully compatible to Si technology. This enables independent control of particle size as well as particle density and particle position. Size control is demonstrated for nanocrystal sizes of 3.8 nm to 2 nm. A size-dependent blue shift of the luminescence from 900 to 750 nm and a luminescence intensity comparable to porous Si are observed. Experiments using high power excitation show a saturation behavior, a blue shift of the PL peak position by 61-87 meV and an increase in full width at half maximum depending on size. A blue shift by around 60 meV is found for luminescence at 5 K. Erbium doping of the superlattice structure for photonic applications is discussed.
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Margit Zacharias, Margit Zacharias, Johannes Heitmann, Johannes Heitmann, Rolf Scholz, Rolf Scholz, M. Schmidt, M. Schmidt, } "Active control of position, density, and size for Si quantum dots for nanophotonic applications", Proc. SPIE 4654, Silicon-based and Hybrid Optoelectronics IV, (27 March 2002); doi: 10.1117/12.463845; https://doi.org/10.1117/12.463845

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