27 March 2002 Photosensitivity and photoemission porous-silicon-based heterostructures
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Proceedings Volume 4654, Silicon-based and Hybrid Optoelectronics IV; (2002) https://doi.org/10.1117/12.463852
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
We were investigated photoluminescence, cathodoluminescence and photosensitivity properties of porous silicon (PS) and PS capsulated by Al2O3 thin film. This film was deposited by RF magnetron sputtering in argon - oxygen atmosphere and had crystalline structure. PS was processed in hydrogen under the high pressure. Light-emission and photosensitivity spectra such double structures in visible and infrared region were investigated. The process of light emitting had tendency to decrease. The cathodoluminescence decay for Al2O33-PS-silicon substrate heterostructure was lower then for PS-silicon substrate.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liubomyr S. Monastyrskii, Liubomyr S. Monastyrskii, Andrii P. Vlasov, Andrii P. Vlasov, Igor B. Olenych, Igor B. Olenych, Petro P. Parandiy, Petro P. Parandiy, Volodymyr P. Savchyn, Volodymyr P. Savchyn, Sergii O. Kostukevich, Sergii O. Kostukevich, } "Photosensitivity and photoemission porous-silicon-based heterostructures", Proc. SPIE 4654, Silicon-based and Hybrid Optoelectronics IV, (27 March 2002); doi: 10.1117/12.463852; https://doi.org/10.1117/12.463852
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