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28 March 2002 Microstructure and optical properties of Ge(Si) dots grown on Si
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Proceedings Volume 4656, Quantum Dot Devices and Computing; (2002) https://doi.org/10.1117/12.460805
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
The microstructural, luminescence properties and photoresponse of multilayer Ge(Si) quantum dots grown on Si (100) substrates are studied. The strain and composition of the dots are studied by synchrotron-radiation x-ray. The dots are found to be Si0.58Ge0.42 alloy with 50% strain relaxed in average. The photoluminescence from the dots is observed up to room temperature. The thermal stability of the quantum dots is studied. P-i-n structures are grown with Ge(Si) dots embedded in the i-layer for photodetection investigation. The photoresponse wavelength of Ge(Si) dots covers the wavelength range of 1.3-1.52 mm and relatively high external quantum efficiency is obtained.
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Jun Wan, Song Tong, Zhimei Jiang, Gaolong Jin, Y. H. Luo, Jian-Lin Liu, Xiaozhou Liao, Jin Zou, and Kang Lung Wang "Microstructure and optical properties of Ge(Si) dots grown on Si", Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); https://doi.org/10.1117/12.460805
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