Single ion implantation for solid state quantum computer development

Thomas Schenkel; J. Meijer; Arun Persaud; Joe W. McDonald; J. P. Holder; Dieter H. Schneider

doi:10.1117/12.460808

28 March 2002 Single-ion implantation for solid state quantum computer development

Thomas Schenkel, J. Meijer, Arun Persaud, Joe W. McDonald, J. P. Holder, Dieter H. Schneider

Author Affiliations +

Proceedings Volume 4656, Quantum Dot Devices and Computing; (2002) https://doi.org/10.1117/12.460808
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for ³¹P^q+ ions. When ³¹P^q+ ions impinge on a wafer surface, their potential energy (9.3 keV for P¹⁵⁺) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.

Citation Download Citation

Thomas Schenkel, J. Meijer, Arun Persaud, Joe W. McDonald, J. P. Holder, and Dieter H. Schneider "Single-ion implantation for solid state quantum computer development", Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); https://doi.org/10.1117/12.460808

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