Translator Disclaimer
28 March 2002 Single-ion implantation for solid state quantum computer development
Author Affiliations +
Proceedings Volume 4656, Quantum Dot Devices and Computing; (2002) https://doi.org/10.1117/12.460808
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for 31Pq+ ions. When 31Pq+ ions impinge on a wafer surface, their potential energy (9.3 keV for P15+) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Schenkel, J. Meijer, Arun Persaud, Joe W. McDonald, J. P. Holder, and Dieter H. Schneider "Single-ion implantation for solid state quantum computer development", Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); https://doi.org/10.1117/12.460808
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top