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28 March 2002 Tunneling-injection quantum dot laser
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Proceedings Volume 4656, Quantum Dot Devices and Computing; (2002) https://doi.org/10.1117/12.460802
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
Different approaches to the design of a genuinely temperature-insensitive quantum dot (QD) laser are proposed. Suppression of the parasitic recombination outside the QDs, which is the dominant source of the temperature dependence of the threshold current in the conventional design of a QD laser, is accomplished either by tunneling injection of carriers into the QDs or by bandgap engineering. Elimination of this recombination channel alone enhances the characteristic temperature T0 above 1000 K. Remaining sources of temperature dependence (recombination from higher QD levels, inhomogeneous line broadening, and violation of charge neutrality in QDs) are studied. Tunneling injection structures are shown to offer an additional advantage of suppressed effects of inhomogeneous broadening and neutrality violation.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Levon V. Asryan and Serge Luryi "Tunneling-injection quantum dot laser", Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); https://doi.org/10.1117/12.460802
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