Paper
10 May 1984 GaAs/GaAlAs Integrated Optoelectronics For Optical Interconnect Applications
M E. Kim, C S. Hong, D Kasemset, R A. Milano
Author Affiliations +
Proceedings Volume 0466, Optical Interfaces for Digital Circuits & Systems; (1984) https://doi.org/10.1117/12.941561
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
The interconnection of electronic system modules, boards, and chips will become increasingly difficult using conventional electrical approaches as the data rates and the number of input/output ports increase. Optical interconnection implementing high-speed (multi-Gb/s) optical links will be an attractive and viable alternative technique. High-performance hardware for such optical interface applications are anticipated in the form of single-chip GaAs/GaAlAs integrated optoelectronic transmitters, receivers, and transceivers. GaAs optical and electronic device technology has advanced to the stage where such integrated optoelectronic devices are now possible. Key integration techniques developed and verified with simple operational transmitters are the basis for realizing more complex integrated optoelectronic circuits with sophisticated optical and electronic functions.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M E. Kim, C S. Hong, D Kasemset, and R A. Milano "GaAs/GaAlAs Integrated Optoelectronics For Optical Interconnect Applications", Proc. SPIE 0466, Optical Interfaces for Digital Circuits & Systems, (10 May 1984); https://doi.org/10.1117/12.941561
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Cited by 3 scholarly publications.
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KEYWORDS
Gallium arsenide

Optoelectronics

Integrated optics

Transmitters

Field effect transistors

Receivers

Metalorganic chemical vapor deposition

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