24 April 2002 Active-area shape influence on the dark current of CMOS imagers
Author Affiliations +
Abstract
This work presents an empirical dark current model for CMOS Active Pixel Sensors (APS). The model is based on experimental data taken of a 256 X 256 APS chip fabricated via HP in a standard 0.5 micrometers CMOS technology process. This quantitative model determines the pixel dark current dependence on two contributing factors: the 'ideal' dark current determined by the photodiode junction, introduced here as a stable shot noise influence of the device active area, and a leakage current due to the device active area shape, i.e., the number of corners present in the photodiode and their angles. This part is introduced as a process induced structure stress effect.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor Shcherback, Alexander A. Belenky, Orly Yadid-Pecht, "Active-area shape influence on the dark current of CMOS imagers", Proc. SPIE 4669, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III, (24 April 2002); doi: 10.1117/12.463445; https://doi.org/10.1117/12.463445
PROCEEDINGS
8 PAGES


SHARE
KEYWORDS
Photodiodes

Diodes

Electro optical modeling

Imaging systems

Data modeling

Systems modeling

3D modeling

Back to Top