24 April 2002 Experimental characterization and simulation of quantum efficiency and optical crosstalk of CMOS photodiode APS
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Abstract
CMOS imagers, now considered as a valuable alternative to CCD in many application fields, still suffer from higher optical crosstalk and lower quantum efficiency. Therefore investigations have to be done in order to characterize these parameters and model them. This paper describes photodiode test structures implemented on two different standard technologies, a 0.7 micrometers lightly doped substrate CMOS SLP/DLM and a 0.5 micrometers EPI on heavily doped substrate CMOS processes from Alcatel-Microelectronics. Both dedicated in-line 20 micrometers square photodiodes and 20 micrometers pitch APS photodiode pixels are implemented. Quantum efficiency and optical crosstalk were measured for several wavelengths. The spotscan measurement setup that makes use of a dedicated halogen optical source coupled to a thin core optical fiber and a microscope objective is described and results illustrating charge collection and diffusion mechanism phenomena are given. For each technology, analytical modeling and physical 2D device simulations (ISE-TCAD) have been performed to evaluate charge collection efficiency. They are taken into account in the comparison with experimental results regarding both quantum efficiency and optical crosstalk. As a summary, the behavior of these two technology types will be compared and perspectives related to processes evolution will be drawn.
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Cecile Marques, Cecile Marques, Pierre Magnan, Pierre Magnan, } "Experimental characterization and simulation of quantum efficiency and optical crosstalk of CMOS photodiode APS", Proc. SPIE 4669, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III, (24 April 2002); doi: 10.1117/12.463418; https://doi.org/10.1117/12.463418
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