24 April 2002 Proton radiation damage in high-resistivity n-type silicon CCDs
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Abstract
A new type of p-channel CCD constructed on high-resistivity n-type silicon was exposed to 12 MeV protons at doses up to 1 X 1011 protons/cm2. The charge transfer efficiency was measured as a function of radiation dose and temperature. We previously reported that these CCDs are significantly more tolerant to radiation damage than conventional n-channel devices. In the work reported here, we used pocket pumping techniques and charge transfer efficiency measurements to determine the identity and concentrations of radiation induced traps present in the damaged devices.
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Christopher Bebek, Christopher Bebek, Donald E. Groom, Donald E. Groom, Steven E. Holland, Steven E. Holland, Armin Karcher, Armin Karcher, William F. Kolbe, William F. Kolbe, Julie S. Lee, Julie S. Lee, Michael E. Levi, Michael E. Levi, Nicholas P. Palaio, Nicholas P. Palaio, Bojan T. Turko, Bojan T. Turko, Michela C. Uslenghi, Michela C. Uslenghi, M. T. Wagner, M. T. Wagner, Guobin Wang, Guobin Wang, } "Proton radiation damage in high-resistivity n-type silicon CCDs", Proc. SPIE 4669, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III, (24 April 2002); doi: 10.1117/12.463422; https://doi.org/10.1117/12.463422
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