9 April 2002 Simple thermal response model for a p-doped silicon substrate irradiated by 1.06- and 1.32-δμm lasers
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Abstract
A variation to an existing laser damage model has been developed. The principle modification in this paper is the inclusion of the temperature dependent absorption coefficient. The absorption coefficient was specifically calculated for silicon irradiated by lasers at 1.06 and 1.32 microns. At these wavelengths, the incident laser photons are at and below the indirect absorption band gap of silicon. Four temperature dependent absorption processes of silicon are considered. These include one photon free carrier absorption, one photon/one phonon indirect absorption, one photon/three phonon indirect absorption and two photon/one phonon indirect absorption. From these four processes, simple absorption coefficients are derived for both 1.06 and 1.32 micrometers radiation. The resulting predictions of laser damage for 1.06 and 1.32 micrometers laser radiation on silicon substrates are provided.
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Paul J. Chernek, Paul J. Chernek, Jay A. Orson, Jay A. Orson, } "Simple thermal response model for a p-doped silicon substrate irradiated by 1.06- and 1.32-δμm lasers", Proc. SPIE 4679, Laser-Induced Damage in Optical Materials: 2001, (9 April 2002); doi: 10.1117/12.461698; https://doi.org/10.1117/12.461698
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