1 July 2002 Complete system of nanoimprint lithography for IC production
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The imprinting method most suited to semiconductor IC applications in the sub-50 nm realm is the step and flash technique currently under development at the University of Texas. In this technique, the space between a rigid fused- silica mold, that has a low-aspect-ratio pattern etched into its surface, and a silicon wafer is filled with a low viscosity photopolymer precursor. After the polymer is cured by exposure to UV radiation, the most is removed and the pattern in the polymer layer is transferred into the silicon wafer by reactive ion etching. Before this lithographic technique can be employed in VLSI production, a method to ensure accurate overlay between the mold and wafer patterns must be devised, feature CD control must be maintained under adverse conditions and a low cost way of fabricating, inspecting and repairing a mold must be developed. To accomplish these task we proposed using: a) an adaptive mold holder and b) a new type of binary mold.
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Donald L. White, Donald L. White, Obert R. Wood, Obert R. Wood, Cheng-Fu Chen, Cheng-Fu Chen, Edward G. Lovell, Edward G. Lovell, Roxann L. Engelstad, Roxann L. Engelstad, } "Complete system of nanoimprint lithography for IC production", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472294; https://doi.org/10.1117/12.472294

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