1 July 2002 Defect printability analysis on electron projection lithography with diamond stencil reticle
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Abstract
Mask defect printability of electron projection lithography (EPL) by using a diamond reticle with programmed defect pattern was investigated. Th reticle was obtained from NTT- AT and wafer exposure was performed by Nikon's EB projection experimental column. In general, the printability of the defects of 'dot' categories are lower than 'shift' categories and the allowable defect size of 'dot' categories in 70 nm node are larger than 100 nm on mask with +/- 10 percent critical dimension (CD) tolerance criteria except edge extension defect. On the other hand, the printability of the defects of 'shift' categories is higher than 'dot' categories. According to the defects CD dat of mask and resist patterns, CD error or placement error caused by the defects of 'shift' categories show a linear correlation between the defect size of mask x reduction ratio and printed defect size of resist pattern. SO the allowable defect size of 'shift' categories in 70 nm node should be less than 28 nm on mask.
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Yoichi Tomo, Yoichi Tomo, Yoshinori Kojima, Yoshinori Kojima, Sumito Shimizu, Sumito Shimizu, Manabu Watanabe, Manabu Watanabe, Hiroshi Takenaka, Hiroshi Takenaka, Hiroshi Yamashita, Hiroshi Yamashita, Teruo Iwasaki, Teruo Iwasaki, Kimitoshi Takahashi, Kimitoshi Takahashi, Masaki Yamabe, Masaki Yamabe, "Defect printability analysis on electron projection lithography with diamond stencil reticle", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472351; https://doi.org/10.1117/12.472351
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