1 July 2002 Development of high-power EUV sources for lithography
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Abstract
We report on the experimental status of the development of gas discharge produced plasma EUV sources for lithography based on the Z-pinch concept. The plasma size of approximately 1.3 mm X 1.5 mm has been matched to come close to the requirements resulting from the etendue of the optical system. The spatial stability of the plasma size as well as the plasma center is better than 15 percent standard deviation. The solid angle of emission is 1.8 sr, i.e. +/- 45 deg. The sources can be operated continuously at 1000 Hz repetition frequency and provide an EUV in-band power of 10 W in 1.8 sr. Spectral measurements providing in-band and out-of-band spectral distribution of the source are discussed.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir M. Borisov, Vladimir M. Borisov, Imtiaz Ahmad, Imtiaz Ahmad, S. Goetze, S. Goetze, Alexander S. Ivanov, Alexander S. Ivanov, Oleg B. Khristoforov, Oleg B. Khristoforov, Juergen Kleinschmidt, Juergen Kleinschmidt, Vladimir Korobotchko, Vladimir Korobotchko, Jens Ringling, Jens Ringling, Guido Schriever, Guido Schriever, Uwe Stamm, Uwe Stamm, Aleksandr Yu. Vinokhodov, Aleksandr Yu. Vinokhodov, } "Development of high-power EUV sources for lithography", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472338; https://doi.org/10.1117/12.472338
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