1 July 2002 Direct photopatterning of metal oxide materials using photosensitive organometallic precursor films
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Abstract
A novel class of photosensitive organometallic precursor materials is used to pattern thin film mixed-metal oxide structures. In this work a photosensitive organometallic precursor is coated onto a silicon substrate and exposed to ultraviolet light through a mask to form patterned oxide structures. This is a negative-tone process in which the unexposed areas can be washed away using a developer solvent. In this work, lithographic contrast curves were measured to characterize the sensitivity and contrast of thin films composed of a mixture of the organometallic precursors for the oxides barium, strontium and titanium. Experiments directed at finding methods to increase the photo-speed of these materials were also conducted. It was found that partial pre-exposure conversion of these films using thermal baking could be used to enhance the sensitivity of these materials. A pre-exposure bake performed at 150 degrees C for 15 seconds was found to decrease the required exposure dose by a factor of two. Dielectric properties were measured for photochemically converted oxide films via electrical measurements on parallel plate capacitor devices. X-ray photoelectron spectroscopy (XPS) was used to quantify the relative amounts of carbon present in the finished films, and it was determined that thermally processes films had higher levels of carbon contamination.
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Sean Jeffrey Barstow, Sean Jeffrey Barstow, Augustin Jeyakumar, Augustin Jeyakumar, Clifford L. Henderson, Clifford L. Henderson, } "Direct photopatterning of metal oxide materials using photosensitive organometallic precursor films", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472317; https://doi.org/10.1117/12.472317
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