1 July 2002 Environmental data from the engineering test stand
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Proceedings Volume 4688, Emerging Lithographic Technologies VI; (2002); doi: 10.1117/12.472304
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States
The EUV Engineering Test Stand (ETS) has demonstrated the printing of 100 nm resolution scanned images. This milestone was achieved with the ETS operating in an initial low-power configuration using a 40 W laser combined with a Xe cluster jet. The third condenser component is referred to as 'C3' illuminator optics was removed after this low-power operation, and extensively characterized for EUV-induced contamination. EUV reflectivity data indicate a decrease in reflectivity from an initial 66 percent to approximately 48- 56 percent, with the more intensely illuminated areas of the C3 having the smaller final reflectivity. Auger electron spectroscopy indicated the observed reflectivity decrease can be largely attributed to carbon contamination, approximately 150-300 Angstrom thick depending on location. No evidence was found for optic oxidation, indicating EtOH successfully prevented EUV/H2O oxidation of the outermost Si layer during exposure to both EUV and out-of- band radiation. Measurements of the reflectivity centroid wavelength shoed a negligible change, suggesting the observed variations were due to surface contaminating and not bulk multilayer radiation damage. The carbon contamination could be removed by RF-O2 cleaning.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leonard E. Klebanoff, Philip A. Grunow, Samual Graham, W. Miles Clift, Alvin H. Leung, Steven J. Haney, "Environmental data from the engineering test stand", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472304; https://doi.org/10.1117/12.472304



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