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1 July 2002 Fabrication of Mo/Si multilayer for EUVL reticle blank using ion beam sputtering
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Abstract
Multilayer deposition is one of the key technologies for the fabrication of reticle blanks for extreme ultraviolet lithography (EUVL). Molybdenum/silicon (Mo/Si) multilayers deposited on mask blanks must have a high reflectance and a low defect density. To achieve this, ASET has developed a deposition system that employs ion beam sputtering (IBS). This paper presents some preliminary experimental results, such as the EUV reflectance and defect density of Mo/Si multilayers deposited with this system.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiromasa Yamanashi, Taro Ogawa, Hiromasa Hoko, Byoung Taek Lee, Eiichi Hoshino, Masashi Takahashi, Takashi Yoneda, and Shinji Okazaki "Fabrication of Mo/Si multilayer for EUVL reticle blank using ion beam sputtering", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); https://doi.org/10.1117/12.472345
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