1 July 2002 Fine pattern replication on 10 x 10-mm exposure area using ETS-1 laboratory tool in HIT
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Proceedings Volume 4688, Emerging Lithographic Technologies VI; (2002); doi: 10.1117/12.472272
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States
Utilizing ETS-1 laboratory tool in Himeji Institute of Technology (HIT), as for the fine pattern replicated by using the Cr mask in static exposure, it is replicated in the exposure area of 10 mm by 2 mm in size that the line and space pattern width of 60 nm, the isolated line pattern width of 40 nm, and hole pattern width of 150 nm. According to the synchronous scanning of the mass and wafer with EUVL laboratory tool with reduction optical system which consisted of three-aspherical-mirror in the NewSUBARU facilities succeeded in the line of 60 nm and the space pattern formation in the exposure region of 10mm by 10mm. From the result of exposure characteristics for positive- tone resist for KrF and EB, KrF chemically amplified resist has better characteristics than EB chemically amplified resist.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Hamamoto, Takeo Watanabe, Hideo Hada, Hiroshi Komano, Shinji Kishimura, Shinji Okazaki, Hiroo Kinoshita, "Fine pattern replication on 10 x 10-mm exposure area using ETS-1 laboratory tool in HIT", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472272; https://doi.org/10.1117/12.472272


Semiconducting wafers

Extreme ultraviolet lithography

Wafer-level optics

Chemically amplified resists



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