1 July 2002 Large-field ion optics for projection and proximity printing and for maskless lithography (ML2)
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Abstract
Recent studies carried out with Infineon Technologies have shown the utility of Ion Projection Lithography (IPL) for the manufacturing of integrated circuits. In cooperation with IBM Storage Technology Division the patterning of magnetic films by resist-less Ion Projection Direct Structuring (IPDS) has been demonstrated. With masked ion beam proximity techniques unique capabilities for lithography on non-planar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBPL) exposure tool with sub - 20 nm resolution capability within 88 mmo exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume ion projection mask-less lithography (IP-ML2) is discussed.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Loeschner, Hans Loeschner, Gerhard Stengl, Gerhard Stengl, Herbert Buschbeck, Herbert Buschbeck, A. Chalupka, A. Chalupka, Gertraud Lammer, Gertraud Lammer, Elmar Platzgummer, Elmar Platzgummer, Herbert Vonach, Herbert Vonach, Patrick W.H. de Jager, Patrick W.H. de Jager, Rainer Kaesmaier, Rainer Kaesmaier, Albrecht Ehrmann, Albrecht Ehrmann, Stefan Hirscher, Stefan Hirscher, Andreas Wolter, Andreas Wolter, Andreas Dietzel, Andreas Dietzel, Ruediger Berger, Ruediger Berger, Hubert Grimm, Hubert Grimm, Bruce D. Terris, Bruce D. Terris, Wilhelm H. Bruenger, Wilhelm H. Bruenger, Dieter Adam, Dieter Adam, Michael Boehm, Michael Boehm, Hans Eichhorn, Hans Eichhorn, Reinhard Springer, Reinhard Springer, Joerg Butschke, Joerg Butschke, Florian Letzkus, Florian Letzkus, Paul Ruchhoeft, Paul Ruchhoeft, John Charles Wolfe, John Charles Wolfe, "Large-field ion optics for projection and proximity printing and for maskless lithography (ML2)", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472336; https://doi.org/10.1117/12.472336
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