Numerical investigation of EUV mask contact layer defect printability at the 30-nm technology node

Amr Y. Abdo; Pei-yang Yan

doi:10.1117/12.472347

1 July 2002 Numerical investigation of EUV mask contact layer defect printability at the 30-nm technology node

Amr Y. Abdo, Pei-yang Yan

Proceedings Volume 4688, Emerging Lithographic Technologies VI; (2002) https://doi.org/10.1117/12.472347
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The printability of an extreme ultraviolet lithography (EUVL) contact layer defect mask was studied using numerical analyses. Three-dimensional models using rigorous electromagnetic simulations were used to predict the mask printing process at the 30 nm technology node. Two types of EUVL mask contact layer defects were studied, i.e., absorber and buffer layer defects. For the absorber, corner and center defects were evaluated and compared for different contact sizes. For the buffer layer, corner defects were investigated for three different materials: ruthenium, carbon, and silicon oxide. It was found that center contact defects were worse than corner defects. For buffer layer defects, the study showed that for a given size, ruthenium defects have the worst effect, followed by carbon and silicon oxide.

Citation Download Citation

Amr Y. Abdo and Pei-yang Yan "Numerical investigation of EUV mask contact layer defect printability at the 30-nm technology node", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); https://doi.org/10.1117/12.472347

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