Translator Disclaimer
1 July 2002 Predicting overlay performance for electron projection lithography masks
Author Affiliations +
Minimizing mask-level distortions is critical to the success of Electron Projection Lithography (EPL) in the sub-100 nm regime. A number of possibilities exist to reduce mask fabrication and pattern transfer distortion including subfield correction, 'dummy' patterns, pattern splitting and film stress control. Finite element modeling was used to illustrate the advantages and capabilities of these correction schemes for a 100-mm stencil mask with 1 mm X 1 mm membrane windows. SRAM-type circuit features including both the interconnect and contact levels were used to simulate realistic circuit layouts with both cross-mask and intra-membrane pattern density gradients. With such correction techniques, it is possible to reduce the EPL mask-level distortions for 'worst-case' mixed pattern types to less than 1.0 nm.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Phillip L. Reu, Cheng-Fu Chen, Roxann L. Engelstad, Edward G. Lovell, Michael J. Lercel, Obert R. Wood II, and R. Scott Mackay "Predicting overlay performance for electron projection lithography masks", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002);


200-mm EPL stencil mask fabrication and metrology
Proceedings of SPIE (December 17 2003)
Subfield distortion of an EPL stencil mask
Proceedings of SPIE (June 16 2003)
Simulating the process flow of the Nikon EPL new geometry...
Proceedings of SPIE (December 06 2004)
Mask holding mechanism for an e beam x ray mask...
Proceedings of SPIE (July 03 1995)

Back to Top