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1 July 2002 Preparation of high-aspect-ratio 70-nm patterns by supercritical drying technique in proximity x-ray lithography
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Supercritical drying (sc-drying) was applied for the photoresist (resist) patterns replicated by proximity x-ray lithography. By that technique, 70 nm L/S patterns with the aspect ratio of 5 were successfully obtained without pattern collapse for both solvent and aqueous development resists by ZEP and UV6, respectively. The procedure was that a puddle developed 8 inch wafer was rinsed 3 times successively without spin drying by changing rinse liquids, and the wafer wet with the 3rd rinse solution which is soluble in supercritical CO2 was transferred to a sc-drying chamber. The sc-drying process was performed with a condition of 8 MPa and 55 degrees C for about 15 min. The process uniformity within a wafer was examined by measuring the pattern width of 100 nm L/S with the resist UVII-HS and it was quite satisfactory. The feasibility study of dry etching with the sc-dried resist was performed. No noticeable change was found in etching ratio between with/without sc-dried resist. The composition change of resist was also investigated by thermal desorption spectroscopy (TDS) and by molecular weight dispersion measurement, and no change was found after sc-drying. The sc-drying technique has high potential to be accepted in semiconductor device manufacturing process.
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Yukiko Kikuchi, Takuya Fukuda, Seiichi Shishiguchi, Kaoru Masuda, and Nobuyuki Kawakami "Preparation of high-aspect-ratio 70-nm patterns by supercritical drying technique in proximity x-ray lithography", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002);

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